TIONER Semiconductor Co., Ltd-Power semiconductor device, silicon carbide Technology

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TIONER Semiconductor Co., Ltd

Innovators of power semiconductor devices

- Power MOSFET
- IGBT
- Diode
- BJT
- IC
- SiC IC
- SiC MOS

SiC MOS

Products

SiC MOS

Products	VDS（V） 100 200 250 300 400 500 600 650 700 800 900 1000 1200	ID（A） 60 30 20 18 16 13 12 10 9 8 7 6 5 4 3 2 1	RDSON（mΩ）（@Vgs=10V） 110 16 15 10.5 10 9.5 8 6.5 6.3 6 5.5 5 4.8 4.5 3.4 3 2.8 2.5 2.3 2.2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.25 1.2 1.15 1.1 1.05 1 0.9 0.85 0.8 0.75 0.7 0.56 0.55 0.5 0.45 0.4 0.35 0.3 0.28 0.27 0.26 0.25 0.18 0.12 0.094 0.085 0.08 0.066 0.051 0.05 0.046 0.042	VGS（TH）(V) 4-5 3-5 2-4 1-3	QG（nC） 153 140.5 136.2 123 96 90.5 90.1 65 64 63 62 61 58 57 56.9 54 52 50.5 50 49.4 49.3 49 47 46.9 46 45.7 45 44 43 42 40 39 38.6 38 37.6 37.1 35 34 33.9 32 31.1 30.1 29 28.4 28 27 26.5 26 25.4 25.2 25 24 23 22.7 21.3 21 20.4 20.2 19.7 19.5 19 18.6 18 17.4 17.3 16.6 16 15.5 15 14.6 14.5 13.4 13 12.8 12.7 12.6 12.3 12 11.5 11.2 9.5 9.4 9 8.8 8.7 8.5 8.4 8 7.9 7 6.2 5.3 5.2 5 4.7 4.3 4.2 4 3.6	Encapsulation form TO-3P(H) TO-3P TO-220F TO-220AB TO-252 TO-251	Specification	State	Update
TNPF80R600S	800	7	Vgs=10V：约 720~780	3.0	7.0	TO-220F			2026-08-03
TNPF80R500S	800	8	Vgs=10V：约 600~650	3.8	9.0	TO-220F			2026-08-03
TNPF80R380S	800	12	Vgs=10V：约 440~480	3.5	10.6	TO-220F			2026-08-03
TNPF80R260S	800	15	Vgs=10V：约 320~360	3.5	11.2	TO-220F			2026-08-03
TNPF80R180S	800	20	Vgs=10V：约 210~240	3.5	5.1	TO-220F			2026-08-03
TNPF65R900S	650	4	Vgs=10V：约 1100~1200	3.2	8.0	TO-220F			2026-08-03
TNPF65R600S	650	7	Vgs=10V：约 720~780	3.0	7.0	TO-220F			2026-08-03
TNPF65R500S	650	8	Vgs=10V：约 600~650	3.5	9.0	TO-220F			2026-08-03
TNPF65R480S	650	8.8	Vgs=10V：约 560~600	3.5	9.0	TO-220F			2026-08-03
TNPF65R380S	650	12	VGS=10V：约 440~480	3.5	10.6	TO-220F			2026-08-03
TNPF65R260S	650	15	VGS=10V：约 320~360	3.5	11.2	TO-220F			2026-08-03
TNPF65R180S	650	20	VGS=10V：约 210~240	3.5	10.6	TO-220F			2026-08-03

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