TIONER Semiconductor Co., Ltd-Power semiconductor device, silicon carbide Technology

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TIONER Semiconductor Co., Ltd

Innovators of power semiconductor devices

- Power MOSFET
- IGBT
- Diode
- BJT
- IC
- SiC IC
- SiC MOS

SiC MOS

Products

SiC MOS

Products	VDS（V） 100 200 250 300 400 500 600 650 700 800 900 1000 1200	ID（A） 60 30 20 18 16 13 12 10 9 8 7 6 5 4 3 2 1	RDSON（mΩ）（@Vgs=10V） 110 16 15 10.5 10 9.5 8 6.5 6.3 6 5.5 5 4.8 4.5 3.4 3 2.8 2.5 2.3 2.2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.25 1.2 1.15 1.1 1.05 1 0.9 0.85 0.8 0.75 0.7 0.56 0.55 0.5 0.45 0.4 0.35 0.3 0.28 0.27 0.26 0.25 0.18 0.12 0.094 0.085 0.08 0.066 0.051 0.05 0.046 0.042	VGS（TH）(V) 4-5 3-5 2-4 1-3	QG（nC） 153 140.5 136.2 123 96 90.5 90.1 65 64 63 62 61 58 57 56.9 54 52 50.5 50 49.4 49.3 49 47 46.9 46 45.7 45 44 43 42 40 39 38.6 38 37.6 37.1 35 34 33.9 32 31.1 30.1 29 28.4 28 27 26.5 26 25.4 25.2 25 24 23 22.7 21.3 21 20.4 20.2 19.7 19.5 19 18.6 18 17.4 17.3 16.6 16 15.5 15 14.6 14.5 13.4 13 12.8 12.7 12.6 12.3 12 11.5 11.2 9.5 9.4 9 8.8 8.7 8.5 8.4 8 7.9 7 6.2 5.3 5.2 5 4.7 4.3 4.2 4 3.6	Encapsulation form TO-3P(H) TO-3P TO-220F TO-220AB TO-252 TO-251	Specification	State	Update
TND80R900S	800	4	VGS=10V：约 1100~1200	3.2	8.0	TO-252			2026-08-03
TND80R600S	800	7	VGS=10V：约 720~780	3.0	7.0	TO-252			2026-08-03
TND80R480S	800	8.8	560~600	3.5	9.0	TO-252			2026-08-03
TND80R380S	800	11	15V 标准 360mΩ	3.5	10.6	TO-252			2026-08-03
TND80R260S	800	15	15V 标准 260mΩ	3.5	11.2	TO-252			2026-08-03
TND80R180S	800	20	标准 15V 驱动典型 165mΩ	3.5	10	TO-252			2026-08-03
TND65R900S	650	4	标称 Vgs=15V 下典型 900mΩ；Vgs=10V 典型约 1100~1200mΩ	3.2V	8	TO-252			2026-08-03
TND65R600S	650	7A	Vgs=15V 典型 600mΩ；Vgs=10V 驱动偏低压，导通电阻会更高，典型约 750~820mΩ	3.2V	1.1nC	TO-252（DPAK）			2026-08-03
TND65R500S	650	6	500(15V)	3.8	9.0	TO-252			2026-08-03
TND65R480S	650	8.8	480(15V)	3.8	9.0	TO-252			2026-08-03
TND65R380S	650	11	380(15V)	3.5	10.6	TO-252			2026-08-03
TND65R260S	650V	15A	260mΩ@VGS=15V	2.8V~4.0V（典型 3.5V）	11.2nC	TO-252(DPAK)			2026-08-03

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