TIONER Semiconductor Co., Ltd

Innovators of power semiconductor devices

SiC MOS

Products
VDS(V)
ID(A)
RDSON(mΩ)(@Vgs=10V)
VGS(TH)(V)
QG(nC)
Encapsulation form
Specification State Update
TND65R180S 650V 20A(Tc=25℃) 典型 180mΩ(区间 160~195mΩ) 典型 2.6V(区间 2.2~3.5V) 10.6nC TO-252 2026-08-03