TIONER Semiconductor Co., Ltd-Power semiconductor device, silicon carbide Technology

TIONER Semiconductor Co., Ltd

Innovators of power semiconductor devices

- Power MOSFET
- IGBT
- Diode
- BJT
- IC

Power MOSFET

Products

Power MOSFET

Tioner Technology provides high performance IGBT products based on advanced FS IGBT technologies. These products enable us to offer cost-effective, reliable and high efficient solutions for various applications including induction heating cooker, welding machine, motor drive, solar inverter and different inverter systems.

Products	VDS（V） 100 200 250 300 400 500 600 650 700 800 900 1000 1200	ID（A） 60 30 20 18 16 13 12 10 9 8 7 6 5 4 3 2 1	RDSON（mΩ）（@Vgs=10V） 110 16 15 10.5 10 9.5 8 6.5 6.3 6 5.5 5 4.8 4.5 3.4 3 2.8 2.5 2.3 2.2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.25 1.2 1.15 1.1 1.05 1 0.9 0.85 0.8 0.75 0.7 0.56 0.55 0.5 0.45 0.4 0.35 0.3 0.28 0.27 0.26 0.25 0.18 0.12 0.094 0.085 0.08 0.066 0.051 0.05 0.046 0.042	VGS（TH）(V) 4-5 3-5 2-4 1-3	QG（nC） 153 140.5 136.2 123 96 90.5 90.1 65 64 63 62 61 58 57 56.9 54 52 50.5 50 49.4 49.3 49 47 46.9 46 45.7 45 44 43 42 40 39 38.6 38 37.6 37.1 35 34 33.9 32 31.1 30.1 29 28.4 28 27 26.5 26 25.4 25.2 25 24 23 22.7 21.3 21 20.4 20.2 19.7 19.5 19 18.6 18 17.4 17.3 16.6 16 15.5 15 14.6 14.5 13.4 13 12.8 12.7 12.6 12.3 12 11.5 11.2 9.5 9.4 9 8.8 8.7 8.5 8.4 8 7.9 7 6.2 5.3 5.2 5 4.7 4.3 4.2 4 3.6	Encapsulation form TO-3P(H) TO-3P TO-220F TO-220AB TO-252 TO-251	State	Update
TNP8N65	650	8	1	2-4	29	TO-220AB		2020-01-15
TNP7N65	650	7	1.4	2-4	24	TO-220AB		2020-01-15
TNP5N65	650	5	2.8	2-4	14.5	TO-220AB		2020-01-15
TNP4N65	650	4	2.8	2-4	14.5	TO-220AB		2020-01-15
TND7N65	650	7	1.4	2-4	24	TO-252	量产	2020-01-15
TND5N65	650	5	2.8	2-4	14.5	TO-252		2020-01-15
TND4N65	650	4	2.8	2-4	14.5	TO-252	量产	2020-01-15
TND2N65	650	2	5	2-4	9.5	TO-252	量产	2020-01-15
TNU7N60	600	7	1.3	2-4	24	TO-251		2020-01-15
TNU4N60	600	4	2.5	2-4	14.5	TO-251		2020-01-15
TNU2N60	600	2	4.5	2-4	9.5	TO-251		2020-01-15
TNPF20N60	600	20	0.45	2-4	57	TO-220F		2020-01-15

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